Incorporation of phosphorus during gas phase epitaxy
暂无分享,去创建一个
J. Flemish | K. Jones | V. Ban | H. Shen
[1] G. Scilla,et al. Epitaxial Growth of GaAs with ( C 2 H 5 ) 2GaCl and AsH3 in a Hotwall Reactor , 1991 .
[2] Hongen Shen,et al. Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry , 1991 .
[3] M. Goorsky,et al. Epitaxial Growth and Selectivity of Al x Ga1 − x As Using Novel Metalorganic Precursors , 1991 .
[4] A. Tripathi,et al. Altering the Composition of InGaAsP Grown by the Hydride Technique by Introducing HCl Downstream , 1991 .
[5] G. Olsen,et al. Selective Epitaxy of III–V Compounds by Low‐Temperature Hydride VPE , 1990 .
[6] G. B. Stringfellow,et al. Pyrolysis of tertiarybutylphosphine , 1989 .
[7] J. Whelan,et al. Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures , 1989 .
[8] T. Kuech,et al. Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs , 1989 .
[9] Masaji Yoshida. Source of carbon contamination in GaAs grown by metalorganic-chloride (Ga(CH3)3/AsCl3/H2) VPE , 1988 .
[10] J. C. Ginocchio,et al. The effect of PH/sub 3/ pyrolysis on the morphology and growth rate of InP grown by hydride vapor phase epitaxy , 1987 .
[11] W. H. Weinberg,et al. Mechanistic details of the heterogeneous decomposition of ammonia on platinum , 1985 .
[12] J. Yardley,et al. Laser induced production of excited states of PH and PH2 from phosphine , 1978 .
[13] D. S. Robertson,et al. Vapour phase preparation of indium phosphide in large quantities , 1976 .
[14] D. Shaw. KINETIC ASPECTS IN THE VAPOUR PHASE EPITAXY OF III–V COMPOUNDS , 1975 .
[15] H. Seki,et al. A new vapour growth method for III–V compound semiconductors using a single flat temperature zone , 1974 .
[16] V. S. Ban,et al. Mass Spectrometric Studies of Vapor‐Phase Crystal Growth II . , 1971 .
[17] M. G. Jacko,et al. THE PYROLYSIS OF TRIMETHYLINDIUM , 1964 .