Improved Bipolar Electromigration Model
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Electromigration (EM) in advanced copper interconnects has become a strong limitation factor for IC designs. As a matter of fact, interconnects design is facing two contradictory needs: decrease ICs dimension to save silicon surface and maintain sufficient EM lifetime under dc stress. In a view, to establish robust design rules, that does not over constraint designers, it is necessary to build accurate extrapolation models. We propose here a new a new ac EM model, that can be used to establish relevant design rules
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