94-GHz Load Pull measurements of SiGe HBT by extracting output power density in W-Band

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on last-generation SiGe HBTs by extracting the input reflection hot S-parameter (S'11), in order to understand the mechanisms of power behavior in the presence of millimeter-wave excitations. The device under test (0.12×4.9μm2) was characterized under large signal load pull showing attractive performance for power amplifier design. A state-of-the-art power density of 22.26 mW/μm2 has been extracted at 94 GHz.

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