Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications
暂无分享,去创建一个
J. Bowers | A. Gossard | X. Liu | A. Ramu | C. Palmstrøm | P. Burke | Hong Lu
[1] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[2] B. Clerjaud. Transition-metal impurities in III-V compounds , 1985 .
[3] C. W. Magee,et al. Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis , 1989 .
[4] T. Finstad,et al. Lattice‐matched Sc1−xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice‐matched metallic compounds to semiconductors , 1990 .
[5] H. Morkoç,et al. Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer , 1991 .
[6] Allen,et al. Band structure, quantum confinement, and exchange splitting in Sc1-xErxAs epitaxial layers buried in GaAs. , 1991, Physical review. B, Condensed matter.
[7] Anthony R. Peaker,et al. Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs , 1992 .
[8] S. Députier,et al. Solid state phase equilibria in the Er-Ga-As system , 1993 .
[9] W. Lambrecht. Electronic structure and optical spectra of the semimetal ScAs and of the indirect-band-gap semiconductors ScN and GdN , 2000 .
[10] Arthur C. Gossard,et al. Electronic structure and conduction in a metal–semiconductor digital composite: ErAs:InGaAs , 2001 .
[11] Andrew G. Glen,et al. APPL , 2001 .
[12] Ali Shakouri,et al. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles , 2005 .
[13] Dmitri O. Klenov,et al. Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers , 2005 .
[14] Dmitri O. Klenov,et al. Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors. , 2006, Physical review letters.
[15] Ali Shakouri,et al. Demonstration of electron filtering to increase the Seebeck coefficient in In0.53Ga0.47As/In0.53Ga0.28Al0.19As superlattices , 2006 .
[16] K. Delaney,et al. Theoretical study of the structural and electronic properties of strained ErAs , 2008 .
[17] Ali Shakouri,et al. Thermoelectric power generator module of 16×16 Bi2Te3 and 0.6% ErAs:(InGaAs)1−x(InAlAs)x segmented elements , 2009 .
[18] Sebastian Volz,et al. Thermal nanosystems and nanomaterials , 2009 .
[19] M. Zebarjadi,et al. Nanoengineered Materials for Thermoelectric Energy Conversion , 2009 .
[20] J. Bowers,et al. Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials , 2010 .