论文信息 - Effects of strain and surface reconstruction on the kinetics of indium incorporation in MBE growth of InAs - 字舞流文

Effects of strain and surface reconstruction on the kinetics of indium incorporation in MBE growth of InAs

C. E. Stutz | K. Evans | D. K. Lorance | R. L. Jones

[1] A. Cho. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face , 1971 .

[2] J. R. Arthur. Surface stoichiometry and structure of GaAs , 1974 .

[3] C. Foxon,et al. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique , 1975 .

[4] K. Jacobi,et al. Structure and reactivity of GaAs surfaces , 1981 .

[5] W. J. Schaffer,et al. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction , 1983 .

[6] P. Cohen,et al. Mass‐action control of AlGaAs and GaAs growth in molecular beam epitaxy , 1985 .

[7] T. Sakamoto,et al. Layer‐by‐layer sublimation observed by reflection high‐energy electron diffraction intensity oscillation in a molecular beam epitaxy system , 1985 .

[8] Thermal desorption spectroscopy of Xe at the Si(111) as a local probe for surface structures , 1985 .

[9] Summary Abstract: Theoretical studies of alloy clustering and interface roughness in InAs, GaAs, and AlAs based heterostructures grown by molecular beam epitaxy , 1986 .

[10] J. Massies,et al. Strain‐induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy , 1987 .