论文信息 - New method for the extraction of MOSFET parameters

New method for the extraction of MOSFET parameters

A new method for the extraction of the MOSFET parameters is presented. The method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.

Gerard Ghibaudo | G. Ghibaudo

[1] B. Hoefflinger,et al. A parametric short-channel MOS transistor model for subthreshold and strong inversion current , 1984, IEEE Transactions on Electron Devices.

[2] Sorin Cristoloveanu,et al. Experimental determination of short-channel MOSFET parameters , 1985 .

[3] M.J. Thoma,et al. A new AC measurement technique to accurately determine MOSFET constants , 1984, IEEE Transactions on Electron Devices.

[4] Gerard Ghibaudo,et al. An analytical model of conductance and transconductance for enhanced-mode MOSFETs , 1986 .

[5] Sorin Cristoloveanu,et al. Low-temperature mobility behaviour in submicron MOSFETs and related determination of channel length and series resistance , 1986 .