Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal

A self-consistent electrical-thermal-optical-gain modeling of threshold characteristics of an InP-based 1300 nm AlInGaAs photonic-crystal vertical-cavity surface-emitting diode laser is presented. It is shown that low threshold characteristics and strong transverse-mode discrimination can be simultaneously achieved for optimized photonic crystal structure and current aperture. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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