Efficient pattern relocation for EUV blank defect mitigation

Blank defect mitigation is a critical step for extreme ultraviolet (EUV) lithography. Targeting the defective blank, a layout relocation method, to shift and rotate the whole layout pattern to a proper position, has been proved to be an effective way to reduce defect impact. Yet, there is still no published work about how to find the best pattern location to minimize the impact from the buried defects with reasonable defect model and considerable process variation control. In this paper, we successfully present an algorithm that can optimally solve this pattern relocation problem. Experimental results validate our method, and the relocation results with full scale layouts generated from Nangate Open Cell Library has shown great advantages with competitive runtimes compared to the existing commercial tool.

[1]  Sungmin Huh,et al.  Printability and inspectability of programmed pit defects on the masks in EUV lithography , 2010, Advanced Lithography.

[2]  Andrew R. Neureuther,et al.  Performance of repaired defects and attPSM in EUV multilayer masks , 2002, Photomask Technology.

[3]  Ying Li,et al.  Compensation methods using a new model for buried defects in extreme ultraviolet lithography masks , 2010, Photomask Technology.

[4]  Ralf Hartmut Güting,et al.  A practical divide-and-conquer algorithm for the rectangle intersection problem , 1987, Inf. Sci..

[5]  Andrew R. Neureuther,et al.  Smoothing based model for images of buried EUV multilayer defects near absorber features , 2008, Photomask Technology.

[6]  Andrew R. Neureuther,et al.  Smoothing based fast model for images of isolated buried EUV multilayer defects , 2008, SPIE Advanced Lithography.

[7]  Andrew R. Neureuther,et al.  Compensation methods for buried defects in extreme ultraviolet lithography masks , 2010, Advanced Lithography.

[8]  Takashi Kamo,et al.  Actinic phase defect detection and printability analysis for patterned EUVL mask , 2010, Advanced Lithography.

[9]  Ted Liang,et al.  Printability of extreme ultraviolet lithography mask pattern defects for 22-40 nm half-pitch features , 2010, Advanced Lithography.

[10]  H. Levinson.  Extreme ultraviolet lithography’s path to manufacturing , 2009 .

[11]  Stefan Wurm,et al.  EUV Lithography , 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

[12]  Derick Wood,et al.  The rectangle intersection problem revisited , 1980, BIT.

[13]  John Burns,et al.  EUV mask defect mitigation through pattern placement , 2010, Photomask Technology.

[14]  Ying Li,et al.  Compensation for EUV multilayer defects within arbitrary layouts by absorber pattern modification , 2011, Advanced Lithography.

[15]  Sungmin Huh,et al.  A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection , 2010, Advanced Lithography.

[16]  Stefan Wurm,et al.  EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing , 2010, Advanced Lithography.

[17]  Chris Clifford.  Simulation and compensation methods for EUV lithography masks with buried defects , 2010 .