Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode.

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

[1]  E. Talik,et al.  Ni–Au contacts to p-type GaN – Structure and properties , 2010 .

[2]  Wen-Chau Liu,et al.  Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure , 2010, IEEE Journal of Quantum Electronics.

[3]  Wen-Chau Liu,et al.  Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes , 2009 .

[4]  Tsung-Han Tsai,et al.  On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure , 2009, IEEE Electron Device Letters.

[5]  Ja-Soon Jang,et al.  High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice , 2008 .

[6]  Kow-Ming Chang,et al.  Highly reliable GaN-based light-emitting diodes formed by p-In/sub 0.1/Ga/sub 0.9/N-ITO structure , 2004 .

[7]  Yan-Kuin Su,et al.  High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact , 2003 .

[8]  Jinn-Kong Sheu,et al.  Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1−xN capping layers , 2002 .

[9]  E. F. Schubert,et al.  Current crowding in GaN/InGaN light emitting diodes on insulating substrates , 2001 .

[10]  H. Fujioka,et al.  Low-temperature activation of Mg-doped GaN using Ni films , 2001 .

[11]  W. Lanford,et al.  Low resistance Ti'Pt'Au ohmic contacts to p-type GaN , 2000 .

[12]  Kelvin G. Lynn,et al.  Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy , 1999 .

[13]  N. Shibata,et al.  Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN , 1998 .

[14]  E. Kinsbron,et al.  Room temperature interdiffusion study of Au/Ga thin film couples , 1984 .

[15]  K. Schubert,et al.  Kristallstruktur von Au2Ga , 1974 .