Shrinking from 0.25 down to 0.12 μm SOI CMOS technology node: a contribution to low-frequency noise in partially depleted N-MOSFETs

Abstract Low-frequency noise is for the first time investigated in 0.12 μm Partially Depleted (PD) Silicon-On-Insulator (SOI) N-MOSFETs in comparison with established results on the 0.25 μm SOI CMOS technology node. The transfer and output characteristics of the devices are first addressed as well as an evaluation of the static performances. Then, we present low-frequency noise measurements carried out in both linear and saturation regimes taking into consideration the usually admitted 1/ f noise models in MOS devices and their applicability in our case. A comparison is achieved with previously published results on 0.25 μm PD SOI N-MOSFETs, showing the drain current noise spectral densities, as well as the Kink-related excess noise occurring in the saturation regime.

[1]  Sebastien Haendler,et al.  Kink-Related Excess Noise in Deep Submicron Partially and Moderately Fully Depleted Unibond N-Metal Oxide Semiconductor Field Effect Transistor (MOSFET) , 2000 .

[2]  Cor Claeys,et al.  The low-frequency noise behaviour of silicon-on-insulator technologies , 1996 .

[3]  R. Kingston,et al.  Semiconductor surface physics , 1957 .

[4]  J. Colinge.  Reduction of kink effect in thin-film SOI MOSFETs , 1988, IEEE Electron Device Letters.

[5]  G.G. Shahidi,et al.  Mainstreaming of SOI Technology , 1999, 29th European Solid-State Device Research Conference.

[6]  Thomas Skotnicki,et al.  Low frequency noise in thin gate oxide MOSFETs , 2001, Microelectron. Reliab..

[7]  Ying-Che Tseng,et al.  Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's , 1999, IEEE Electron Device Letters.

[8]  Eddy Simoen,et al.  The kink-related excess low-frequency noise in silicon-on-insulator MOST's , 1994 .

[9]  S. Haendler,et al.  Comparative low frequency noise analysis in various SOI devices: floating body, body-tied, DTMOS with and without current limiter , 2000, 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).

[10]  F. Balestra,et al.  Performance and physical mechanisms in deep submicron SOI MOSFETs , 1999 .

[11]  Ping Keung Ko,et al.  Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's , 1999 .

[12]  I. Lundström,et al.  Low frequency noise in MOS transistors—I Theory , 1968 .