High-performance 980 nm quantum dot lasers for high-power applications
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Michel Calligaro | Johann Peter Reithmaier | Alfred Forchel | Michel Krakowski | Frank Klopf | P. Collot | A. Forchel | M. Krakowski | J. Reithmaier | P. Collot | F. Klopf | M. Calligaro
[1] A. R. Kovsh,et al. Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications , 2000 .
[2] Andreas Stintz,et al. Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .
[3] Nikolai N. Ledentsov,et al. 3.9 W CW power from sub-monolayer quantum dot diode laser , 1999 .
[4] Johann Peter Reithmaier,et al. High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers , 1998 .
[5] Johann Peter Reithmaier,et al. High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer , 1999 .
[6] Larry A. Coldren,et al. Design parameters for lateral carrier confinement in quantum-dot lasers , 1999 .
[7] Johann Peter Reithmaier,et al. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers , 2000 .
[8] Andreas Stintz,et al. Low-threshold quantum dot lasers with 201 nm tuning range , 2000 .