Illumination and Temperature Dependence of Breakdown Mechanisms in Multi-crystalline Silicon Solar Cells

Abstract If a solar cell is partially shaded in a photovoltaic module, it can be reverse-biased and therefore dissipate power rather than generating it. When being locally concentrated, this power dissipation can lead to hot spots damaging solar modules irreversibly. In order to assess the hot spot danger of solar cells prior to module integration, their operating points under partial shading conditions need to be known which can be determined by simulation. We show, that deviations between simulated and measured module I-V characteristics can be explained by contrary temperature- and illumination-dependent effects on the reverse characteristic of a multi-crystalline silicon solar cell. A negative temperature coefficient for voltages of V

[1]  Wilhelm Warta,et al.  Diode breakdown related to recombination active defects in block-cast multicrystalline silicon solar cells , 2009 .

[2]  Otwin Breitenstein,et al.  Lock-in thermography : basics and use for functional diagnostics of electronic components , 2003 .

[3]  Wilhelm Warta,et al.  Impact of Reverse Breakdown in Shaded Silicon Solar Cells on Module Level: Simulation and Experiment , 2012 .

[4]  Wilhelm Warta,et al.  Understanding junction breakdown in multicrystalline solar cells , 2011 .

[5]  Wilhelm Warta,et al.  Impact of Junction Breakdown in Multi-Crystalline Silicon Solar Cells on Hot Spot Formation and Module Performance , 2011 .

[6]  O. Breitenstein,et al.  Physical mechanisms of breakdown in multicrystalline silicon solar cells , 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

[7]  Zhixin Chen,et al.  The effects of size and orientation on magnetic properties and exchange bias in Co3O4 mesoporous nanowires , 2011 .

[8]  Eicke R. Weber,et al.  Observation of metal precipitates at prebreakdown sites in multicrystalline silicon solar cells , 2009 .

[9]  Otwin Breitenstein,et al.  Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits , 2009 .

[10]  Marius Grundmann,et al.  Identification of pre-breakdown mechanism of silicon solar cells at low reverse voltages , 2010 .

[11]  W. Kwapil,et al.  High net doping concentration responsible for critical diode breakdown behavior of upgraded metallurgical grade multicrystalline silicon solar cells , 2010 .

[12]  Otwin Breitenstein,et al.  Imaging physical parameters of pre‐breakdown Sites by lock‐in thermography techniques , 2008 .