论文信息 - Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer. - 字舞流文

Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer.

M. Motala | C. Muratore | K. Chabak | M. Durstock | E. Heller | N. Glavin | M. Snure | Eric W Blanton | A. Hilton | K. Burzynski | Jeff. L. Brown | Eric W. Blanton | Jeff. L. Brown | Jeff L. Brown