12.5 Gbit/s silicon bipolar 1:4-demultiplexer IC

A silicon bipolar 1:4 demultiplexer IC is presented which can be operated up to ∼12.5 Gbit/s. The channels are aligned to the outputs by two external control signals. The 370 transistor chip was fabricated with an 0.4 μm emitter double polysilicon 21 GHz f T Si bipolar process and consumes ∼1.9 W