Fundamentals of envelope function theory for electronic states and photonic modes in nanostructures
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[1] Foreman. Envelope-function formalism for electrons in abrupt heterostructures with material-dependent basis functions. , 1996, Physical review. B, Condensed matter.
[2] P. Voisin,et al. Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects , 1998 .
[3] G. Russakoff,et al. A Derivation of the Macroscopic Maxwell Equations , 1970 .
[4] L. J. Sham,et al. Electronic Properties of Flat-Band Semiconductor Heterostructures , 1981 .
[5] G. Bastard,et al. Interband absorption in quantum wires. I. Zero-magnetic-field case. , 1992, Physical review. B, Condensed matter.
[6] M. Burt. On the validity and range of applicability of the particle in a box model , 1994 .
[7] P. Stavrinou,et al. Operator ordering and boundary conditions for valence-band modeling: Application to [110] heterostructures , 1997 .
[8] M. Kemerink,et al. Exchange-correlation energy of a hole gas including valence band coupling , 1997 .
[9] Million-Atom Pseudopotential Calculation of Gamma-X Mixing in GaAs/AlAs Superlattices and Quantum Dots , 1997 .
[10] J. Callaway. Quantum theory of the solid state , 1974 .
[11] B. A. Foreman. ANALYTICAL ENVELOPE-FUNCTION THEORY OF INTERFACE BAND MIXING , 1998 .
[12] Kohn,et al. Quantum mechanics of electrons in crystals with graded composition. , 1993, Physical review letters.
[13] Foreman. Foundations of the envelope-function theory for phonons in heterostructures. , 1995, Physical review. B, Condensed matter.
[14] M G Burt,et al. The justification for applying the effective-mass approximation to microstructures , 1992 .
[15] R. J. Elliott,et al. Intensity of Optical Absorption by Excitons , 1957 .
[16] P. Hui,et al. Theory of photonic band structures: a vector-wave k·p approach , 1994 .
[17] J. C. Slater. Electrons in perturbed periodic lattices , 1949 .
[18] Massimo Altarelli,et al. Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices , 1983 .
[19] Chuang,et al. Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells. , 1992, Physical review. B, Condensed matter.
[20] Foreman. Analytic model for the valence-band structure of a strained quantum well. , 1994, Physical review. B, Condensed matter.
[21] Krebs,et al. Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels Effect. , 1996, Physical review letters.
[22] F. Aryasetiawan,et al. The GW method , 1997, cond-mat/9712013.
[23] Andrea Fiore,et al. Quantum Engineering of Optical Nonlinearities , 1996, Science.
[24] G. Bastard,et al. Superlattice band structure in the envelope-function approximation , 1981 .
[25] Chang,et al. Effects of quasi-interface states in HgTe-CdTe superlattices. , 1985, Physical review. B, Condensed matter.
[26] M. Burt. The evaluation of the matrix element for interband optical transitions in quantum wells using envelope functions , 1993 .
[27] Breakdown of the atomic dipole approximation for the quantum well interband dipole matrix element , 1995 .
[28] O'Reilly,et al. Evaluation of various approximations used in the envelope-function method. , 1994, Physical review. B, Condensed matter.
[29] R. I. Taylor,et al. Generation of superlattice bandstructure using a wavefunction matching technique , 1987 .
[30] H. Ando,et al. Band‐edge optical absorption spectra of GaAs quantum wires calculated by multiband effective mass theory , 1993 .
[31] P. Stavrinou,et al. General rules for constructing valence band effective mass Hamiltonians with correct operator order for heterostructures with arbitrary orientations , 1998 .
[32] J. C. Inkson,et al. Hole states in GaAs/AlAs heterostructures and the limitations of the Luttinger model , 1994 .
[33] Sheard,et al. Hole subband states of GaAs/AlxGa1-xAs quantum wells within the 6 x 6 Luttinger model. , 1994, Physical review. B, Condensed matter.
[34] J. M. Luttinger. Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory , 1956 .
[35] M. Burt. A new effective-mass equation for microstructures , 1988 .
[36] Wood,et al. Successes and failures of the k , 1996, Physical review. B, Condensed matter.
[37] A. Zunger,et al. Prediction of a strain-induced conduction-band minimum in embedded quantum dots , 1998, cond-mat/9801191.
[38] Steven G. Louie,et al. Electron-Hole Excitations in Semiconductors and Insulators , 1998 .
[39] L. Rosenfeld,et al. Theory of electrons , 1951 .
[40] B. A. Foreman,et al. Effective-mass Hamiltonian and boundary conditions for the valence bands of semiconductor microstructures. , 1993, Physical review. B, Condensed matter.
[41] G. Wannier. The Structure of Electronic Excitation Levels in Insulating Crystals , 1937 .
[42] Christian Mailhiot,et al. Theory of semiconductor superlattice electronic structure , 1990 .
[43] W. Kohn,et al. Motion of Electrons and Holes in Perturbed Periodic Fields , 1955 .
[44] M. Burt,et al. A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemitters , 1976 .
[45] Per-Olov Löwdin,et al. A Note on the Quantum‐Mechanical Perturbation Theory , 1951 .
[46] W. Pötz,et al. Theoretical study of subband levels in semiconductor heterostructures. , 1985, Physical review. B, Condensed matter.
[47] D. M. Wood,et al. Successes and failures of the {ital k}{center_dot}{ital p} method: A direct assessment for GaAs/AlAs quantum structures , 1996 .
[48] Johannes Pollmann,et al. Role of semicore d electrons in quasiparticle band-structure calculations , 1998 .
[49] E. Kane,et al. Band structure of indium antimonide , 1957 .
[50] Manijeh Razeghi,et al. Generalized k ⋅ p perturbation theory for atomic-scale superlattices , 1997 .