Memory device and memory programming method

PURPOSE: A memory device and a memory programming method of an MLC(Multi-Level Cell) or an MBC(Multi-Bit Cell) for reducing error of a data program are provided to program a first data page in a plurality of multi bit cells and configure an SSD(Solid State Drive/Disk) using non-volatile memory by reducing error of the data program. CONSTITUTION: A memory device(100) includes a multi bit cell array(110), a programming unit, a first controller, and a second controller. The multi bit cell array includes multi bit cells. The programming unit programs a first data page in multi bit cells and programs a second data page in the multi bit cells in which the first data page is programmed. The first controllers divide the multi bit cells in which the first data pages are programmed in the first group and the second group based on the second data page.