X-ray induced radiation damage in segmented p+n silicon sensors

Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which have to meet extraordinary requirements for experiments at the XFEL. This paper shortly describes the requirements and challenges for silicon sensors at the European XFEL and addresses the efforts made by the detector group of Hamburg University for the sensor development. In particular, the main results on the X-ray induced radiation damage are presented.

[1]  R. Klanner,et al.  Time dependence of charge losses at the Si-SiO2 interface in p + n-silicon strip sensors , 2013, 1305.0398.

[2]  B. Schmitt,et al.  Challenges for the Adaptive Gain Integrating Pixel Detector (AGIPD) design due to the high intensity photon radiation environment at the European XFEL , 2013, 1303.2523.

[3]  R. Klanner,et al.  Design of the AGIPD sensor for the European XFEL , 2012, 1210.0430.

[4]  Robert Klanner,et al.  Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL , 2012, 1210.0427.

[5]  R. Klanner,et al.  Optimization of the radiation hardness of silicon pixel sensors for high x-ray doses using TCAD simulations , 2011, 1111.4901.

[6]  R. Klanner,et al.  Study of X-ray radiation damage in silicon sensors , 2011, 1111.1180.

[7]  Hanno Perrey,et al.  Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon. , 2011, Journal of synchrotron radiation.

[8]  H. Perrey.  Jets at low $Q^2$ at HERA and radiation damage studies for silicon sensors for the XFEL , 2011 .

[9]  R. Klanner,et al.  Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of a , 2011 .

[10]  Robert Klanner,et al.  Simulation and experimental study of plasma effects in planar silicon sensors , 2010, 1007.4433.

[11]  Robert Klanner,et al.  Impact of plasma effects on the performance of silicon sensors at an X-ray FEL , 2010 .

[12]  Heinz Graafsma,et al.  Requirements for and development of 2 dimensional X-ray detectors for the European X-ray Free Electron Laser in Hamburg , 2009 .

[13]  Th. Tschentscher,et al.  Technical Report: The European X-ray Free-Electron Laser Facility: A New Infrastructure for Research Using Ultrashort, Coherent X-ray Pulses of Extreme Brightness , 2006 .

[14]  G. Verzellesi,et al.  Gate-length dependence of bulk generation lifetime and surface generation velocity measurement in high-resistivity silicon using gated diodes , 2000, ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095).

[15]  R. Pierret.  The gate-controlled diode s0 measurement and steady-state lateral current flow in deeply depleted MOS structures , 1974 .

[16]  T. Pöhlsen.  Charge Losses in Silicon Sensors and Electric-Field Studies at the Si-SiO$_2$ Interface , 2013 .

[17]  Thomas Weiland,et al.  XFEL: The European X-Ray Free-Electron Laser - Technical Design Report , 2006 .