Structural reorganisation of vicinal surfaces on 6H-SiC(0001) induced by hot hydrogen etching
暂无分享，去创建一个
[1] A. Leycuras,et al. Structure and morphology of concave-shaped surfaces on 6H–SiC(0 0 0 1) after H2 etching , 2002 .
[2] S. Tong,et al. Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy , 2000 .
[3] U. Starke,et al. Surface structure of hexagonal SiC surfaces : key to crystal growth and interface formation? , 2000 .
[4] J. Edgar,et al. Gaseous etching of 6H–SiC at relatively low temperatures , 2000 .
[5] A. Leycuras. Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor , 2000 .
[6] N. Ohtani,et al. Step bunching behaviour on the {0 0 0 1} surface of hexagonal SiC , 2000 .
[7] A. Ellison,et al. In situ substrate preparation for high-quality SiC chemical vapour deposition , 1997 .
[8] E. Janzén,et al. Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching , 1996 .
[9] Wang,et al. Interactions of Br with Si(111)-7 x 7: Chemisorption, step retreat, and terrace etching. , 1995, Physical review. B, Condensed matter.
[10] H. Neddermeyer,et al. Scanning tunneling microscopy on concave-shaped Si(100) substrates , 1995 .
[11] R. Kliese,et al. An STM study of mechanochemically prepared Si(111) substrates : an extended set of vicinal surfaces , 1993 .
[12] H. Matsunami,et al. Crystal growth of SiC by step-controlled epitaxy , 1990 .