Device benchmark comparisons via kinetic, hydrodynamic, and high-hield models

Abstract This paper describes benchmark comparisons for a GaAs n + −n−n + diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.

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