A procedure for accurate noise measurements of one port devices with high reflection coefficients
暂无分享,去创建一个
[1] A. Jelenski,et al. Noise characterization of Schottky barrier diodes for high-frequency mixing applications , 1992, IEEE Microwave and Guided Wave Letters.
[2] Herbert Zirath,et al. High‐frequency noise and current‐voltage characteristics of mm‐wave platinum n–n+–GaAs Schottky barrier diodes , 1986 .
[3] Thomas W. Crowe,et al. Design and fabrication of 0.5 micron GaAs Schottky barrier diodes for low-noise terahertz receiver applications , 1990 .
[4] A. Ziel,et al. Transit-Time Effects in the Noise of Schottky-Barrier Diodes , 1986 .
[5] Viktor Krozer,et al. Accuracy of nonoscillating one-port noise measurements , 1995 .
[6] Viktor Krozer,et al. New approach to the design and the fabrication of THz Schottky barrier diodes , 1993 .