论文信息 - Influence of the process sequence and thermal budget on the strain of Si:C stressor layers formed by ion implantation - 字舞流文

Influence of the process sequence and thermal budget on the strain of Si:C stressor layers formed by ion implantation

A. Hikavyy | E. Rosseel | T. Schram | B. Douhard | T. Hoffmann | C. Ortolland | W. Vandervorst | M. Ameen | A. Moussa | L. Rubin | A. Falepin