Effective two-level-model with asymmetric gain for laser diodes

Abstract An extension of the two-level-model which features asymmetric gain is introduced for semiconductor laser diodes. The model includes an evolution equation for the material polarization in semiconductor media obtained from the calculation of the electrical susceptibility. A new parameter α0 appears which accounts for the asymmetry of the spectral gain curve and the non-zero dispersion at the gain peak, and it also induces a shift of the frequency of the gain peak as the carrier density is varied. The model seems flexible enough to describe a variety of experimental results.

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