Failure Analyses of Modern Power Semiconductor Switching Devices
暂无分享,去创建一个
Michael Pecht | Bhanu Sood | Diganta Das | Nathan Valentine | D. Das | M. Pecht | B. Sood | Nathan Valentine | Michael G. Pecht
[1] K. Sugiyama,et al. Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss high-voltage IGBTs , 2004, IEEE Transactions on Electron Devices.
[2] B. Streetman. Solid state electronic devices , 1972 .
[3] Yann Weber,et al. Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion , 2013, Microelectron. Reliab..
[4] Josef Lutz,et al. Semiconductor Power Devices , 2011 .
[5] Isaak D. Mayergoyz,et al. Fundamentals of Electric Power Engineering , 2014 .
[6] P. Jacob,et al. SEM investigation on IGBT latch-up failure , 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
[7] Jean-Michel Vinassa,et al. A study of 600V punch-through IGBT dynamics under unclamped inductive switching , 1999, APEC '99. Fourteenth Annual Applied Power Electronics Conference and Exposition. 1999 Conference Proceedings (Cat. No.99CH36285).
[8] Stéphane Lefebvre,et al. Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions , 2007, Microelectron. Reliab..
[9] Mounira Berkani,et al. Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling , 2011, IEEE Transactions on Industrial Electronics.
[10] Michel Mermet-Guyennet,et al. IGBT module failure analysis in railway applications , 2008, Microelectron. Reliab..
[11] G. Wachutka,et al. Analysis of the latch-up process and current filamentation in high-voltage trench-IGBT cell arrays , 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).