论文信息 - Coplanar Ka-band SiGe-MMIC amplifier

Coplanar Ka-band SiGe-MMIC amplifier

Design, technology and first results of a coplanar SiGe HBT amplifier monolithically integrated on high resistivity silicon are reported. The circuit provides a gain of 4 dB at 26 GHz.

[1] Erich Kasper,et al. Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) Structures , 1994 .

[2] W. Heinrich,et al. Quasi-TEM description of MMIC coplanar lines including conductor-loss effects , 1993 .

[3] A. Gruhle. SiGe Heterojunction Bipolar Transistors , 1994 .

[4] J. Buechler. Two frequency multifunctional radar for mobile application , 1995, IEEE NTC,Conference Proceedings Microwave Systems Conference.