The role of polarization in the threshold voltage of field effect transistors based on ZnO/MgO
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L. Malatto | L. Patrone | J. Guimpel | M. Villafuerte | J. Ferreyra | G. Nieva | G. Bridoux | C. Figueroa | M. C. Zapata | V. Runco Leal | C. Navarro