Non-contact deep level transient spectroscopy (DLTS) based on surface photovoltage

The authors present results of non-contact, wafer-scale measurement of the deep level thermal emission realised in GaAs on a native surface barrier using surface photovoltage (SPV) transients. The principle of corresponding optical deep level transient spectroscopy (DLTS) is discussed and the approach is applied to non-contact wafer mapping.