Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

The impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level optical spectroscopy. The deep level spectra of the GaN:C:Si samples exhibited several band-gap states. A monotonic relation between systematic doping with C and quantitative trap concentration revealed C-related deep levels. A deep acceptor at Ec−2.05eV and a deep donor at Ec−0.11eV are newly reported states, and the latter is the first directly observed deep level attributed to the CGa defect. A configuration-coordinate model involving localized lattice distortion revealed strong evidence that C-related deep levels at Ec−3.0eV and Eν+0.9eV are likely identical and associated with the yellow luminescence in C-doped GaN films. Of the deep levels whose trap concentration increase with C doping, the band-gap states at Ec−3....

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