Study of ACRT influence on crystal growth in high‐temperature solutions by the “high‐resolution induced striation method”

The growth rate of an individual growing face of a crystal growing together with other crystals is calculated for slowly cooled high-temperature solutions taking into consideration changes of the boundary layer thickness caused by switching on and off “accelerated crucible rotation technique (ACRT)”. The influence of ACRT on the growth rates of Ga-YIG single crystals is measured by induced striations generated by periodic temperature variations. With this method it is possible to estimate ACRT effectiveness expressed in the relation of the effective boundary layer thicknesses without and with ACRT, δeff0/δeff ACRT, the value of which is only about 1.4 at the demonstrated example.