论文信息 - Optically pumped mode‐locked InGaAsP lasers

Optically pumped mode‐locked InGaAsP lasers

We report tunable cw mode‐locked laser action from synchronously pumped InGaAsP lasers with an output power of 2 mW. Nearly bandwidth‐limited pulses of 6‐ps duration have also been obtained using a mechanically chopped pump beam. 2–5‐μm‐thick LPE quaternary layers lasing at 1.1 and 1.2 μm are longitudinally pumped by a Kr+ laser. Peak output powers of greater than 25 W, tunable over a 25‐nm range, can be achieved. Unmode‐locked operation has also been accomplished.

C. Roxlo | M. Salour | S. Groves | M. Plonko | R. Putnam

[1] C. Roxlo,et al. Dewar design for optically pumped semiconductor lasers , 1982 .

[2] J. Wiesenfeld,et al. Optically pumped ultrashort cavity In 1− xGaxAsyP 1− y lasers: picosecond operation between 0.83 and 1.59 μm , 1981 .

[3] J. Pruett,et al. Narrow-band linearly scannable infrared lasing between 1.09 and 1.12 microm in the dye DNDTPC perchlorate. , 1981, Optics letters.

[4] S. Eng,et al. Gigahertz bandwidth measurements of photodetectors and fibers using picosecond pulses generated by semiconductor lasers , 1981 .

[5] S. Groves,et al. Liquid-phase epitaxial growth of InP and InGaAsP alloys , 1981 .

[6] D. Cotter,et al. A tunable picosecond IR laser generating multi-megawatt pulses in the range 3–8 m , 1981 .

[7] C. Roxlo,et al. Synchronously pumped mode‐locked CdS platelet laser , 1981 .

[8] L. Mollenauer,et al. Direct demonstration of distortionless picosecond-pulse propagation in kilometer-length optical fibers. , 1979, Optics letters.

[9] L. Mollenauer,et al. Color-center laser generates picosecond pulses and several watts cw over the 1.24 - 1.45-Mu m range. , 1979, Optics letters.

[10] G. Kelner,et al. Material‐Selective Chemical Etching in the System InGaAsP / InP , 1979 .

[11] Hermann A. Haus,et al. Picosecond pulse generation with a cw GaAlAs laser diode , 1978 .