A Broadband 42-63-GHz Amplifier Using 0.13-μm CMOS Technology

An amplifier using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide- semiconductor (CMOS) technology is presented in this paper. This four-stage cascode thin-film microstrip amplifier achieves the peak gains of 18.1 dB at 45 GHz and 17.8 dB at 60 GHz. The 3-dB frequency bandwidth ranges from 42 to 63 GHz and the minimum noise figure is 8.2 dB at 60 GHz. The amplifier demonstrates the widest bandwidth with competitive gain among recently published millimeter-wave (MMW) CMOS amplifiers.

[1]  Jeng-Han Tsai,et al.  A miniature Q-band low noise amplifier using 0.13-/spl mu/m CMOS technology , 2006 .

[2]  M.T. Yang,et al.  60-GHz PA and LNA in 90-nm RF-CMOS , 2006, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006.

[3]  Huei Wang,et al.  A Miniature V-band 3-Stage Cascode LNA in 0.13/spl mu/m CMOS , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[4]  Kun-You Lin,et al.  18-26 GHz low-noise amplifiers using 130- and 90-nm bulk CMOS technologies , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

[5]  R.W. Brodersen,et al.  Millimeter-wave CMOS design , 2005, IEEE Journal of Solid-State Circuits.