Facile and reversible carrier-type manipulation of layered MoTe2 toward long-term stable electronics.

Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FET. EB treatment adjusted the back gate bias by 135 V compared with that of the FET processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about one order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4% to 60.8% in the MoTe2 channel after EB treatment. The Fermi level would be pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET displayed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs, but also demonstrated MoTe2 channels with desirable performance, including long-term stability.

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