Ni silicide formation on epitaxial Si1-yCy/(001) layers

[1]  M. D. Lei,et al.  C Redistribution during Ni Silicide Formation on Si1 − y C y Epitaxial Layers , 2010 .

[2]  C. Detavernier,et al.  Pt redistribution during Ni"Pt… silicide formation , 2008 .

[3]  S. Chang,et al.  Characteristics of Strained-Si nMOSFET Using Nickel Silicide Source/Drain , 2008 .

[4]  G. Lo,et al.  Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon–Carbon Source/Drain , 2008, IEEE Electron Device Letters.

[5]  E. Chor,et al.  Schottky barrier height tuning of silicide on Si1−xCx , 2007 .

[6]  Matty Caymax,et al.  Improved thermal stability of Ni-silicides on Si: C epitaxial layers , 2007 .

[7]  T. Seong,et al.  Thickness Effect of a Ge Interlayer on the Formation of Nickel Silicides , 2007 .

[8]  K. Okubo,et al.  Improvement in NiSi/Si contact properties with C-implantation , 2005 .

[9]  J. Ku,et al.  The effects of Ta on the formation of Ni-silicide in Ni0.95xTax0.05/Si systems , 2004 .

[10]  O. Nakatsuka,et al.  Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts , 2004 .

[11]  L. J. Chen,et al.  Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer , 2003 .

[12]  A. See,et al.  Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2+ implantation , 2001 .

[13]  S. K. Lahiri,et al.  Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition , 1999 .

[14]  D. Hits,et al.  Carbon incorporation in Si1−yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source , 1998 .

[15]  G. Fischer,et al.  Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures , 1995 .

[16]  L. Hung,et al.  Morphological degradation of TiSi2 on 〈100〉 silicon , 1986 .