CMOS stress sensors on [100] silicon
暂无分享,去创建一个
R. Ramani | R. Jaeger | J. Suhling | J.C. Suhling | R.C. Jaeger | R. Ramani | A. T. Bradley | Jianping Xu | A.T. Bradley | Jianping Xu
[1] H. Ali. Stress-induced parametric shift in plastic packaged devices , 1997 .
[2] W. P. Mason,et al. Use of Piezoresistive Materials in the Measurement of Displacement, Force, and Torque , 1957 .
[3] H.C.J.M. van Gestel,et al. On-chip piezoresistive stress measurement and 3D finite element simulations of plastic DIL 40 packages using different materials , 1993, Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93).
[4] E. Takeda,et al. A new aspect on mechanical stress effects in scaled MOS devices , 1990 .
[5] Charles S. Smith. Piezoresistance Effect in Germanium and Silicon , 1954 .
[6] Richard C. Jaeger,et al. A [100] silicon stress test chip with optimized piezoresistive sensor rosettes , 1994, 1994 Proceedings. 44th Electronic Components and Technology Conference.
[7] Hiroaki Mikoshiba,et al. Stress-sensitive properties of silicon-gate MOS devices , 1981 .
[8] Richard C. Jaeger,et al. Piezoresistive Stress Sensors for Structural Analysis of Electronic Packages , 1991 .
[9] O. N. Tufte,et al. Piezoresistive Properties of Heavily Dopedn-Type Silicon , 1964 .
[10] Richard C. Jaeger,et al. A piezoresistive sensor chip for measurement of stress in electronic packaging , 1993, Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93).
[11] S. A. Gee,et al. Strain-gauge mapping of die surface stresses , 1989 .
[12] Bruno Morten,et al. Piezoresistivity effects in MOS-FET useful for pressure transducers , 1979 .
[13] A. P. Dorey,et al. The effect of strain on MOS transistors , 1969 .
[15] Darvin R. Edwards,et al. Test Structure Methodology of IC Package Material Characterization , 1983 .
[16] Richard C. Jaeger,et al. Effects of stress-induced mismatches on CMOS analog circuits , 1995, 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.
[17] Richard C. Jaeger,et al. Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture , 1992 .
[19] R. Ramani,et al. CMOS stress sensor circuits using piezoresistive field-effect transistors (PIFETs) , 1995, Digest of Technical Papers., Symposium on VLSI Circuits..
[20] H. Miura,et al. The impact of mechanical stress control on VLSI fabrication process , 1996, International Electron Devices Meeting. Technical Digest.
[21] D. Colman,et al. Mobility Anisotropy and Piezoresistance in Silicon p‐Type Inversion Layers , 1968 .
[22] A. P. Dorey,et al. A high sensitivity semiconductor strain sensitive circuit , 1975 .
[23] T. Nishimura,et al. Stress analysis of shallow trench isolation for 256 M DRAM and beyond , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[24] R. Jaeger,et al. Die stress characterization using arrays of CMOS sensors , 1998, Proceedings of the 24th European Solid-State Circuits Conference.
[25] Michel Steyaert,et al. Influence of die attachment on MOS transistor matching , 1996, Proceedings of International Conference on Microelectronic Test Structures.
[26] Richard C. Jaeger,et al. Off-axis sensor rosettes for measurement of the piezoresistive coefficients of silicon , 1993 .
[27] Jeffrey C. Suhling,et al. Errors associated with the design, calibration and application of piezoresistive stress sensors in (100) silicon , 1994 .
[28] Makoto Ishida,et al. A monolithically integrated three-axis accelerometer using CMOS compatible stress-sensitive differential amplifiers , 1999 .
[29] R. Jaeger,et al. FET mobility degradation and device mismatch due to packaging induced die stress , 1997, Proceedings of the 23rd European Solid-State Circuits Conference.