Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
暂无分享,去创建一个
A Albert | H. B. Weber | M. Albrecht | D. Waldmann | M. Krieger | S. Reshanov | A. Schöner | J. Jobst | S Hertel | D Waldmann | J Jobst | M Albrecht | S Reshanov | A Schöner | M Krieger | H B Weber | A. Albert | S. Hertel
[1] R. Johnson,et al. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review , 1996 .
[2] L. Vandersypen,et al. Gate-induced insulating state in bilayer graphene devices. , 2007, Nature materials.
[3] T. Ohta,et al. Controlling the Electronic Structure of Bilayer Graphene , 2006, Science.
[4] Fengnian Xia,et al. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. , 2010, Nano letters.
[5] F. Schwierz. Graphene transistors. , 2010, Nature nanotechnology.
[6] S. Sze,et al. Physics of Semiconductor Devices: Sze/Physics , 2006 .
[7] C. Beenakker. Andreev reflection and Klein tunneling in graphene , 2007, 0710.3848.
[8] Jehoshua Bruck,et al. Graphene-based atomic-scale switches. , 2008, Nano letters.
[9] W. J. Choyke,et al. Silicon carbide : recent major advances , 2004 .
[10] Michael Krieger,et al. Bottom-gated epitaxial graphene. , 2011, Nature materials.
[11] Andre K. Geim,et al. The rise of graphene. , 2007, Nature materials.
[12] H. B. Weber,et al. Current annealing and electrical breakdown of epitaxial graphene , 2011 .
[13] L. Ley,et al. Silicon Carbide: Volume 2: Power Devices and Sensors , 2009 .
[14] Marc Dubois,et al. Electron properties of fluorinated single-layer graphene transistors , 2010, 1005.3474.
[15] T. Blank,et al. Mechanisms of current flow in metal-semiconductor ohmic contacts , 2007 .
[16] L. Ley,et al. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications , 2009 .
[17] M. Lemme. Current Status of Graphene Transistors , 2009, 0911.4685.
[18] John W. Palmour,et al. 6H–silicon carbide devices and applications , 1993 .
[19] K. Novoselov,et al. Micrometer-scale ballistic transport in encapsulated graphene at room temperature. , 2011, Nano letters.
[20] F. Guinea,et al. Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. , 2006, Physical review letters.
[21] S. Sriram,et al. SiC for Microwave Power Transistors , 1997 .
[22] H. Matsunami,et al. Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High‐Voltage Rectifying Devices , 1997 .
[23] Kostya S. Novoselov,et al. Graphene: Materials in the flatland , 2011 .
[24] Anant K. Agarwal,et al. Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs , 2010 .
[25] Heiko B. Weber,et al. Quantum oscillations and quantum Hall effect in epitaxial graphene , 2010 .
[26] P. Machac,et al. Origin of ohmic behavior in Ni, Ni2Si and Pd contacts on n-type SiC , 2010 .
[27] T. Tang,et al. Direct observation of a widely tunable bandgap in bilayer graphene , 2009, Nature.
[28] A. Balandin. Thermal properties of graphene and nanostructured carbon materials. , 2011, Nature materials.
[29] W. J. Choyke,et al. Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide , 1992 .
[30] Thomas Frank,et al. SiC MATERIAL PROPERTIES , 2005 .
[31] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[32] C. Berger,et al. Electronic Confinement and Coherence in Patterned Epitaxial Graphene , 2006, Science.
[33] Stefan Hertel,et al. A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel , 2012 .
[34] C. Coletti,et al. Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation , 2011 .
[35] V. Kravets,et al. Fluorographene: a two-dimensional counterpart of Teflon. , 2010, Small.
[36] P. Kim,et al. Electron transport in disordered graphene nanoribbons. , 2009, Physical review letters.
[37] J.H. Klootwijk,et al. Merits and limitations of circular TLM structures for contact resistance determination for novel III-V HBTs , 2004, Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).
[38] Vladimir I. Fal'ko,et al. Selective transmission of Dirac electrons and ballistic magnetoresistance of n − p junctions in graphene , 2006 .
[39] Robert C. Wolpert,et al. A Review of the , 1985 .
[40] K. Novoselov. Nobel Lecture: Graphene: Materials in the Flatland , 2011 .
[41] K. Emtsev,et al. Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts , 2008 .
[42] B. Appleton,et al. Tuning Schottky diodes at the many-layer-graphene/ semiconductor interface by doping , 2011 .
[43] C. Dimitrakopoulos,et al. Wafer-Scale Graphene Integrated Circuit , 2011, Science.
[44] P. Kim,et al. Energy band-gap engineering of graphene nanoribbons. , 2007, Physical review letters.
[45] C. Coletti,et al. Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation. , 2009, Physical review letters.
[46] H. B. Weber,et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. , 2009, Nature materials.
[47] C. Berger,et al. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. , 2004, cond-mat/0410240.