论文信息 - Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals - 字舞流文

Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

B. Ferrand | J. Bluet | P. Grosse | M. Couchaud | M. Anikin | K. Chourou | R. Madar | C. Faure | G. Basset | Y. Grange | C. Calvat

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