A 650 V rated RESURF-type LDMOS employing an internal clamping diode for induced bulk breakdown without EPI layer

A new LDMOS employing an internal clamping diode is proposed in order to prevent surface breakdown which is a weak point of RESURF Type LDMOS. The clamping diode of N+/N-/P-well/P-sub was fabricated by cutting n-well located below drain contact and inserting p-well. Breakdown stabilization was realized by inducing bulk breakdown at the clamping diode without the increase of Ron,sp (specific on resistance) when width of p-well was designed to 12 um.

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