Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

The effects of short-term step-stress on the performance of GaN HEMTs have been evaluated for the first time by means of current deep-level-transient-spectroscopy (DLTS) measurements. When subjected to high reverse gate bias the devices experienced an increase in the drain current dispersion as well as in the gate current. Current DLTS measurements carried out during the stress experiment show that the device degradation can be associated to the formation of a defect that is thermally activated with an energy of 0.5 eV.

[1]  M. Meneghini,et al.  Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing , 2009, IEEE Electron Device Letters.

[2]  U. Mishra,et al.  30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[3]  J. D. del Alamo,et al.  Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors , 2008, IEEE Electron Device Letters.

[4]  G. Meneghesso,et al.  A review of failure modes and mechanisms of GaN-based HEMTs , 2007, 2007 IEEE International Electron Devices Meeting.

[5]  Umesh K. Mishra,et al.  GaN-Based RF Power Devices and Amplifiers , 2008, Proceedings of the IEEE.