Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

The power consumption of a conventional photoreceiver is dominated by that of the electric amplifier connected to the photodetector (PD). An ultralow-capacitance PD can overcome this limitation, because it can generate sufficiently large voltage without an amplifier when combined with a high-impedance load. In this work, we demonstrate an ultracompact InGaAs PD based on a photonic crystal waveguide with a length of only 1.7 μm and a capacitance of less than 1 fF. Despite the small size of the device, a high responsivity of 1 A/W and a clear 40 Gbit/s eye diagram are observed, overcoming the conventional trade-off between size and responsivity. A resistor-loaded PD was actually fabricated for light-to-voltage conversion, and a kilo-volt/watt efficiency with a gigahertz bandwidth even without amplifiers was measured with an electro-optic probe. Combined experimental and theoretical results reveal that a bandwidth in excess of 10 GHz can be expected, leading to an ultralow energy consumption of less than 1 fJ/bit for the photoreceiver. Amplifier-less PDs with attractive performance levels are therefore feasible and a step toward a densely integrated photonic network/processor on a chip.

[1]  G. Agrawal Fiber‐Optic Communication Systems , 2021 .

[2]  Ming C. Wu,et al.  Germanium wrap-around photodetectors on Silicon photonics. , 2015, Optics express.

[3]  Masaya Notomi,et al.  Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects. , 2015, Optics express.

[4]  Masaya Notomi,et al.  Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy. , 2014, Optics express.

[5]  J. Hartmann,et al.  Germanium avalanche receiver for low power interconnects , 2014, Nature Communications.

[6]  Masaya Notomi,et al.  Toward fJ/bit optical communication in a chip , 2014 .

[7]  Masaya Notomi,et al.  Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers , 2013, Nature Photonics.

[8]  Toshihiko Baba,et al.  Two-photon-absorption photodiodes in Si photonic-crystal slow-light waveguides , 2013 .

[9]  Wei-Zen Chen,et al.  A 40 Gbps optical receiver analog front-end in 65 nm CMOS , 2012, 2012 IEEE International Symposium on Circuits and Systems.

[10]  David A B Miller,et al.  Energy consumption in optical modulators for interconnects. , 2012, Optics express.

[11]  Masaya Notomi,et al.  Ultralow-power all-optical RAM based on nanocavities , 2012, Nature Photonics.

[12]  Masaya Notomi,et al.  Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser. , 2012, Optics express.

[13]  H. Zimmermann,et al.  Zero-bias 40Gbit/s germanium waveguide photodetector on silicon. , 2012, Optics express.

[14]  M. Watts,et al.  Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. , 2011, Optics express.

[15]  E. Alon,et al.  Ultra-efficient 10 Gb/s hybrid integrated silicon photonic transmitter and receiver. , 2011, Optics express.

[16]  M. Notomi,et al.  High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted , 2010 .

[17]  M. Notomi,et al.  Sub-femtojoule all-optical switching using a photonic-crystal nanocavity , 2010 .

[18]  Solomon Assefa,et al.  CMOS-Integrated Optical Receivers for On-Chip Interconnects , 2010, IEEE Journal of Selected Topics in Quantum Electronics.

[19]  Pengyu Fan,et al.  Resonant germanium nanoantenna photodetectors. , 2010, Nano letters.

[20]  David A. B. Miller,et al.  Device Requirements for Optical Interconnects to Silicon Chips , 2009, Proceedings of the IEEE.

[21]  C. K. Chen,et al.  Wafer-Scale 3D Integration of Silicon-on-Insulator RF Amplifiers , 2009, 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[22]  Luca P. Carloni,et al.  Photonic Networks-on-Chip for Future Generations of Chip Multiprocessors , 2008, IEEE Transactions on Computers.

[23]  K. Saraswat,et al.  Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna , 2008 .

[24]  Fujikata Junichi,et al.  Si Nano-Photodiode with a Surface Plasmon Antenna , 2006 .

[25]  K. Nishi,et al.  Si Nano-Photodiode with a Surface Plasmon Antenna , 2005, LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings.

[26]  David A. B. Miller,et al.  Receiver-less optical clock injection for clock distribution networks , 2003 .

[27]  T. K. Woodward,et al.  1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies , 1999 .

[28]  Takashi Kurokawa,et al.  Hybrid integration of smart pixels by using polyimide bonding: demonstration of a GaAs p-i-n photodiode/CMOS receiver , 1999 .

[29]  Tadao Nagatsuma,et al.  Measurement of High-Speed Devices and Integrated Circuits Using Electro-Optic Sampling Technique (Special Issue on Opto-Electronics and LSI) , 1993 .

[30]  K. Brennan Theory of the steady‐state hole drift velocity in InGaAs , 1987 .

[31]  John E. Bowers,et al.  High-speed zero-bias waveguide photodetectors , 1986 .

[32]  C. Xu,et al.  Physical Modeling of the Capacitance and Capacitive Coupling Noise of Through-Oxide Vias in FDSOI-Based Ultra-High Density 3-D ICs , 2013, IEEE Transactions on Electron Devices.

[33]  Chi-Kuang Sun,et al.  Ultrafast transport dynamics of p-i-n photodetectors under high-power illumination , 1998, IEEE Photonics Technology Letters.