Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technology
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[1] Jerry G. Fossum,et al. Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's , 1991 .
[2] S. Veeraraghavan,et al. Short-channel effects in SOI MOSFETs , 1989 .
[3] Y. Omura,et al. 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[4] Yannis Tsividis. Moderate inversion in MOS devices , 1982 .
[5] P. Smeys,et al. Nondestructive Characterization of Soi Wafers Using Spectroscopic Reflectometry , 1993 .
[6] Y. Omura,et al. 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer , 1991 .
[7] Hans-Oliver Joachim,et al. Simulation and two-dimensional analytical modeling of subthreshold slope in ultrathin-film SOI MOSFETs down to 0.1 mu m gate length , 1993 .
[8] Ching-Yuan Wu,et al. A new 2-D analytic threshold-voltage model for fully depleted short-channel SOI MOSFET's , 1993 .
[9] K. K. Young. Short-channel effect in fully depleted SOI MOSFETs , 1989 .
[10] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[11] J. Fossum,et al. A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD , 1988 .
[12] Jerry G. Fossum,et al. Computer-aided performance assessment of fully depleted SOI CMOS VLSI circuits , 1993 .
[13] M. Alles,et al. Considerations for SIMOX low voltage applications , 1993, Proceedings of 1993 IEEE International SOI Conference.
[14] G. Taylor. Subthreshold conduction in MOSFET's , 1978, IEEE Transactions on Electron Devices.
[15] Mario Pinto-Guedes,et al. A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET , 1987, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.