X-밴드 응용분야를 위한 GaN HEMT 모델링

This paper describes modeling of AlGaN/GaN High Electron Mobility Transistors(HEMTs) for X-band applications. The AlGaN/GaN HEMTs with a gate length of 0.25 ㎛ and a total gate width of 800 um were fabricated by ETRI. The model of GaN HEMT devices is Angelov-GaN model for high power applications. Procedure of modeling is as follows. 1. DC measurements, 2. NWA(Network Analyzer) calibration, 3. NWA De-embedding, 4. S-parameter measurement, 5. DC extraction, 6. S-parameter extraction, 7 Global optimization, 8. HB simulation to verify Spectrum. Comparing with model simulation and measurement data, the model parameters were obtained. We will design X-band PA MMIC using Angelov-GaN model.