论文信息 - Low-Temperature Synthesis of Gallium Nitride Thin Films Using Reactive Rf-Magnetron Sputtering

Low-Temperature Synthesis of Gallium Nitride Thin Films Using Reactive Rf-Magnetron Sputtering

The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film deposition rate on rf-discharge power, substrate temperature and working gas pressure was estimated. The influence of technological conditions of deposition on crystal structure parameters of gallium nitride thin films were investigated.

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