论文信息 - Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices - 字舞流文

Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices

H. Iwai | T. Hattori | N. Sugii | A. Nishiyama | P. Ahmet | K. Kakushima | K. Natori | K. Tsutsui | T. Kawanago | M. Kouda