On the AC random telegraph noise (RTN) in MOS devices: An improved multi-phonon based model

As devices scaling down into nanometer region, the random telegraph noise (RTN) has become a significant issue for device variability and reliability, which has been extensively studied at DC conditions and recently also at AC conditions. The nonradiative multiphonon (NMP) theory has been introduced to describe the statistical characteristics of DC RTN; however, basic NMP model cannot explain the frequency dependence of AC RTN statistics. In this paper, by analyzing detailed trapping/detrapping behavior of oxide defects, it is found that there exist metastable states due to the polarization effect of localized defect. An improved NMP model is proposed for the first time, which agrees well with experiments. The results are helpful for deep understanding of AC RTN in nanoscaled devices and the future circuit design against RTN.