Resistance-change devices based on solid electrolytes

Scalable elements that can be switched between widely-separated non-volatile resistance states at very low power are desirable for applications in next generation memory and logic. One potential approach involves the use of solid electrolyte films. A mobile metal ion-containing electrolyte film sandwiched between an oxidizable metal layer and an inert electrode constitutes a device which reversibly transitions between high and low resistance states. The resistance reduction occurs by the formation of a nanoscale conducting bridge created by reduction of the metal ions. A reverse bias dissolves the connection. Such polarity-dependent switching is attainable using voltages of a few hundred mV and currents in the μA range and can occur within a few tens of nanoseconds. In addition to possessing the endurance, retention, and CMOS compatibility required of future switching elements, such devices have excellent scaling prospects due to their low operational energy and demonstrated physical scalability. This paper reviews solid electrolyte resistance-change devices and discusses how the electrical characteristics of the most promising variants depend on the unique phase-separated nanostructure of the ion-containing films.

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