Wetting and dissolution studies of fluoropolymers used in 157 nm photolithography applications

Photolithography using the F2 excimer laser at 157 nm, a technology to bridge traditional optical lithography and next generation lithographies, promises to enable ultralarge scale integrated devices with sub-70 nm design rules. Chemically amplified resists based on fluoropolymers have previously been shown to be good candidates for 157 nm microlithography. In our research, hexafluoroisopropyl alcohol (HFIPA) groups have been incorporated into polymers to improve the base solubility and to increase the transparency needed for new photoresists at 157 nm. These new polymers have absorbance values at 157 nm ranging from 1.7 to 3.9 μm−1. The introduction of fluorine groups increases their hydrophobicity and makes these polymers more difficult to wet at the surface. We have studied the effect of fluorine content on hydrophobicity of fluorinated polymers by measuring contact angle data over short time intervals. The ability to combine fluoropolymer synthesis with extensive contact angle studies has proven to be...