A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs

A single-pole double-throw switch, utilizing double-shunt, deep-saturated HBTs is implemented in a 0.13 μm SiGe BiCMOS technology, occupying 0.36 mm2 of IC area. A superior switch performance is identified when HBTs are operated in saturation regime, and state of the art performance is achieved at D-band frequencies from 96 to 163 GHz. Measurements show a minimum insertion loss of 2.6 dB at 120 and 150 GHz, a highest isolation of 29 dB at 120 GHz and an input 1 dB compression point of 17 dBm at 94 GHz, outperforming similar implementations in deep-scaled CMOS technologies.

[1]  Gabriel M. Rebeiz,et al.  140–220 GHz SPST and SPDT Switches in 45 nm CMOS SOI , 2012, IEEE Microwave and Wireless Components Letters.

[2]  A. Leuther,et al.  Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz , 2008, 2008 38th European Microwave Conference.

[3]  J. Fournier,et al.  A Traveling-Wave CMOS SPDT Using Slow-Wave Transmission Lines for Millimeter-Wave Application , 2013, IEEE Electron Device Letters.

[4]  J. Cressler,et al.  An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs , 2012, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[5]  J. Cressler,et al.  A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs , 2014, IEEE Microwave and Wireless Components Letters.

[6]  Gabriel M. Rebeiz,et al.  A Low-Loss 50–70 GHz SPDT Switch in 90 nm CMOS , 2009, IEEE Journal of Solid-State Circuits.