论文信息 - Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories

Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories

In this paper, we analyzed lateral migration mechanism during the retention operation in 3-D NAND flash memories. Retention characteristics for different trap energy levels $(E_{t})$ of charge trap layer were investigated through Technology computer-aided design (TCAD) simulation and modeled through stretched exponential function. In addition, time-constant $(\tau)$ at various temperatures were extracted through the modeled equation. Finally, the activation energy $(E_{a})$ of lateral migration mechanism was extracted by adopting the Arrhenius relationship.

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