A 0.7W fully integrated 42GHz power amplifier with 10% PAE in 0.13µm SiGe BiCMOS

In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an output power of 0.7W with a power-added efficiency (PAE) of 10% at 42GHz and a -3dB bandwidth of 9GHz. This is 2.6 times more output power than a recently reported millimeter-Wave (mm-Wave) silicon-based PA [1]. The circuit is a fully integrated mm-Wave PA achieving a leading output power approaching 1 Watt in a silicon process.

[1]  Xiaofeng Li,et al.  Electrical funnel: A broadband signal combining method , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[2]  U.R. Pfeiffer,et al.  A 23-dBm 60-GHz Distributed Active Transformer in a Silicon Process Technology , 2007, IEEE Transactions on Microwave Theory and Techniques.

[3]  Anh-Vu Pham,et al.  A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[4]  L. Richard Carley,et al.  A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[5]  J. F. Buckwalter,et al.  A Nested-Reactance Feedback Power Amplifier for $Q$-Band Applications , 2012, IEEE Transactions on Microwave Theory and Techniques.

[6]  Yi Zhao,et al.  A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS , 2012, IEEE Journal of Solid-State Circuits.