Phase change memory management method and phase change memory management apparatus

An embodiment in the invention discloses a phase change memory management method comprises following steps: (1) querying a free page in a phase change memory; (2) performing a 1-filling operation to each bit in the free page to generate a filled page; (3) when a write operation to the filled page is received, determining a bit address required to be 0-filled in the filled page according to the write operation; and (4) performing 0-writing to the bit corresponding to the bit address. The embodiment also discloses a phase change memory management apparatus. By means of the method and the apparatus, when the write operation to the filled page is carried out, only is 0 required to be written to the filled page while 1 is not required to be written so that a problem of a long required time during 1-writing to a memory page in the prior art is avoided. The method and the apparatus can effectively reduce time delay during the write operation.