In-plane magnetic anisotropy in CoCrPt and CoCrTa films deposited onto patterned silicon substrates

Topographically induced in-plane magnetic anisotropy has been observed in CoCrTa and CoCrPt films deposited onto oxidized silicon substrates which are lithographically patterned with fine grooves of period 200–320 nm and amplitude 20–50 nm. The coercivity and remanence are higher parallel to the grooves. Anisotropy has been observed in both rf- and dc-magnetron sputtered films with a (1120) preferred orientation, which is achieved by growth at elevated temperature on a (200)-oriented Cr underlayer at low base pressures. Anisotropy increases with the amplitude of the grooves in the silica substrate.

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